| PART |
Description |
Maker |
| AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM（江户）家庭
4M X 4 CMOS Quad CAS DRAM (EDO) family
4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| WEDPNF8M721V-XBX WEDPNF8M721V-1010BC WEDPNF8M721V- |
8Mx72 Synchronous DRAM 8Mb Flash Mixed Module Multi-Chip Package 8Mx72同步DRAM 8MB闪存的混合模块多芯片封装
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| MT4C4001JECJ-7/IT MT4C4001JECJ-7/XT MT4C4001JECG-8 |
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDIP20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CZIP20
|
Austin Semiconductor, Inc
AUSTIN SEMICONDUCTOR INC
|
| GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C |
1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Electronic Theatre Controls, Inc.
Rochester Electronics, LLC
Integrated Silicon Solution, Inc.
|
| EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM
128Mb (2MBank6) Synchronous DRAM 128Mb的（200万Bank6）同步DRAM
128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
